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| TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W - 28V - 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 23 0.726 min. * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. * LOW NOISE * HIGH GAIN - 13dB MINIMUM * SURFACE MOUNT 2.28 2.79 4.82 5.33 APPLICATIONS TO-220 PLASTIC PACKAGE PIN 1 - GATE PIN 3 - SOURCE PIN 2 - DRAIN PIN 4 - DRAIN * LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V 20V 5A -65 to 125C 150C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V PO = 4W VDS = 0V ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A IDQ = 0.1A f = 200MHz VGS = -5V f = 1MHz f = 1MHz f = 1MHz 1 0.8 13 40 20:1 60 30 2.5 pF SEME D1084UK Min. 70 Typ. Max. Unit V 1 1 7 mA A V S dB % -- VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance VDS = 28V VGS = 0 VDS = 28V VGS = 0 * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 2C / W Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk Prelim. 7/96 |
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